The diamond team from the National Key Laboratory of Solid State Microwave Devices and Circuits of the China Electronics Industry Foundation Research Institute made a breakthrough in diamond heterojunction and created the first cubic aluminum nitride/diamond heterojunction material and field effect transistor. The research team innovatively proposed a domain-matching epitaxial growth model, used a diamond-surface hydrogen terminal as a platform to regulate the reaction to form a high-quality single-crystal cubic aluminum nitride/diamond heterojunction heterojunction, and successfully developed a high-performance enhanced heterojunction field effect transistor. This work completed the key link from theoretical calculation to material preparation to device verification, providing a material foundation for high-performance diamond RF devices. The heterojunction epitaxial method developed by the team provides a new paradigm for semiconductor material preparation. In the next step, the team will continue to optimize materials and device processes, promote the development of heterojunction technology, and support the technological upgrading of next-generation ultra-wide bandgap semiconductors.

The diamond team from the National Key Laboratory of Solid State Microwave Devices and Circuits of the China Electronics Industry Foundation Research Institute made a breakthrough in diamond heterojunction and created the first cubic aluminum nitride/diamond heterojunction material and field effect transistor. The research team innovatively proposed a domain-matching epitaxial growth model, used a diamond-surface hydrogen terminal as a platform to regulate the reaction to form a high-quality single-crystal cubic aluminum nitride/diamond heterojunction heterojunction, and successfully developed a high-performance enhanced heterojunction field effect transistor. This work completed the key link from theoretical calculation to material preparation to device verification, providing a material foundation for high-performance diamond RF devices. The heterojunction epitaxial method developed by the team provides a new paradigm for semiconductor material preparation. In the next step, the team will continue to optimize materials and device processes, promote the development of heterojunction technology, and support the technological upgrading of next-generation ultra-wide bandgap semiconductors.