On September 30, at the semi-annual results meeting, Chen Yingzheng, secretary of the board of directors of Hengkun New Materials, said that the company's TEOS capacity utilization rate continues to rise, and the current utilization rate is over 50%. A number of metal-based, high-K precursor products have entered the customer verification stage, and some new products have passed verification to obtain orders. The company hopes to gradually improve the layout of precursor products and strive to create the company's second revenue growth curve. At the same time, she said that spin-coated dielectric materials are the core materials required for manufacturing DRAM, 14nm and below advanced logic chips, and high-stack 3D NAND memory chips, and are currently in the R&D and industrialization preparation stages.

On September 30, at the semi-annual results meeting, Chen Yingzheng, secretary of the board of directors of Hengkun New Materials, said that the company's TEOS capacity utilization rate continues to rise, and the current utilization rate is over 50%. A number of metal-based, high-K precursor products have entered the customer verification stage, and some new products have passed verification to obtain orders. The company hopes to gradually improve the layout of precursor products and strive to create the company's second revenue growth curve. At the same time, she said that spin-coated dielectric materials are the core materials required for manufacturing DRAM, 14nm and below advanced logic chips, and high-stack 3D NAND memory chips, and are currently in the R&D and industrialization preparation stages.