Atomera will present a paper and a poster at SISPAD 2026, applying its Mears Silicon Technology™ (MST®) Quantum Engineered Epitaxial Silicon platform to two distinct semiconductor device challenges, including a paper presentation on enabling next-generation 4F² DRAM transistors and a poster on reducing leakage in gallium nitride (GaN) on Silicon power devices.
WHO: |
Albert Lu, Staff Engineer, Atomera |
WHAT: |
In-person paper presentation entitled “Enabling 4F² DRAM Junctionless Vertical Channel Transistors with Novel Oxygen Inserted Si Substrates” (Room A1, 3rd Floor) |
The presentation details a TCAD simulation study examining a fundamental architecture shift in DRAM scaling: the transition from the conventional 6F² cell to the 4F² cell built around a Vertical Channel Transistor (VCT). This transition demands sufficient on-state drive current for read/write operation, elimination of the Floating Body Effect (FBE), and off-state leakage low enough to meet retention-time targets. The study shows that MST’s predefined doping layers in the silicon substrate enable a junctionless VCT architecture for 4F² DRAM cells. By precisely controlling the doping profile and dopant out-diffusion, MST satisfies these read/write current and data retention requirements while simplifying the process flow and reducing selective epitaxial steps, offering a simpler, more scalable, lower-cost path to multiple 4F² DRAM nodes. |
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WHEN: |
Sunday, September 27, 2026 at 10:30 p.m. to 10:50 p.m. PDT (Monday, September 28, 2026 at 2:30 p.m. to 2:50 p.m. JST) |
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WHO: |
Dr. Ilya Rumyantsev, Principal Engineer, TCAD Modeling, Atomera |
WHAT: |
In-person poster entitled “Physics-Informed Compact Modeling of Off-State Leakage and Breakdown in GaN-on-Si Devices” (Room A3-A4) |
The poster introduces a compact model of off-state leakage and breakdown in GaN-on-Si high-electron-mobility transistors (HEMTs). It compares devices built on conventional silicon, high-resistivity silicon, and Atomera’s MST-modified silicon. The data show that the MST devices have lower low-voltage leakage and a delayed high-field current rise compared to the conventional control. High-resistivity silicon behaves differently, while interface measurements indicate that MST modifies the buried AlN/Si interface. The model reproduces these behaviors, providing a practical framework for comparing process splits, localizing where leakage changes, and guiding further MST and GaN-on-Si development. |
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WHEN: |
Tuesday, September 29, 2026 at 12:00 a.m. to 2:00 a.m. PDT (Tuesday, September 29, 2026 at 4:00 p.m. to 6:00 p.m. JST) |
WHERE: |
3-40, Sakuramachi, Chuo-ku, Kumamoto-city, |
Kumamoto, 860-0805, Japan |
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Company website: https://atomera.com/
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About Atomera
Atomera Incorporated (NASDAQ: ATOM) is a semiconductor materials and technology licensing company focused on deploying its proprietary performance-enhancing technology into the semiconductor industry. Atomera has developed Mears Silicon Technology™, or MST®, a quantum-engineered thin-film technology that increases performance and power efficiency in semiconductor transistors. MST can be implemented using equipment already deployed in semiconductor manufacturing facilities and is complementary to other nano-scaling technologies in the semiconductor industry roadmap. More information can be found at www.atomera.com.
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