On September 8, CCID Consultants released the “Fourth-Generation Semiconductor Frontier Technology Forecast Study” in Beijing. The report points out that the three ultra-wide bandgap materials, gallium oxide, aluminum nitride, and diamond, are ushering in large-scale substrate sizing, epitaxial breakthroughs, and acceleration of the entire device commercialization chain. The next five years will move from R&D and verification to large-scale commercial use. SBD onboarding and mass production of normally closed MOSFETs will be landmark nodes.

On September 8, CCID Consultants released the “Fourth-Generation Semiconductor Frontier Technology Forecast Study” in Beijing. The report points out that the three ultra-wide bandgap materials, gallium oxide, aluminum nitride, and diamond, are ushering in large-scale substrate sizing, epitaxial breakthroughs, and acceleration of the entire device commercialization chain. The next five years will move from R&D and verification to large-scale commercial use. SBD onboarding and mass production of normally closed MOSFETs will be landmark nodes.