On September 8, Samsung Electronics and Asmat announced the expansion of strategic cooperation. Samsung will join an industry cooperation program to promote the development of 12-inch mask technology, and plans to use Asmack's high-numerical aperture extreme ultraviolet lithography technology for large-scale DRAM production for the first time by 2028. Samsung said the 12-inch mask is expected to improve fab production efficiency, reduce chip manufacturing costs, and reduce mask splicing restrictions. High NA EUV is expected to extend the DRAM process miniaturization route, simplify the process through higher resolution, and improve production efficiency. Samsung will also work with industry partners to develop 12-inch mask technology and supporting infrastructure.

On September 8, Samsung Electronics and Asmat announced the expansion of strategic cooperation. Samsung will join an industry cooperation program to promote the development of 12-inch mask technology, and plans to use Asmack's high-numerical aperture extreme ultraviolet lithography technology for large-scale DRAM production for the first time by 2028. Samsung said the 12-inch mask is expected to improve fab production efficiency, reduce chip manufacturing costs, and reduce mask splicing restrictions. High NA EUV is expected to extend the DRAM process miniaturization route, simplify the process through higher resolution, and improve production efficiency. Samsung will also work with industry partners to develop 12-inch mask technology and supporting infrastructure.