V10 is Samsung's newest 3D NAND flash memory, specially developed to meet the growing demand for high-performance, high-capacity, and energy-efficient storage in the age of artificial intelligence. Samsung Electronics' three-layer stacked HARC merger technology enables a V-NAND architecture with more than 400 lines. By combining it with multi-hole and zero-virtual hole technology, while improving manufacturing efficiency and overall product quality, the V10 achieved a 58% increase in bit density compared to the previous generation. The V10 architecture has high bit density and can support ultra-large SSDs of up to 128 TB, and its I/O performance of more than 4.8 Gbps supports the next generation of PCIe Gen7 SSDs. At the same time, higher energy efficiency helps reduce power consumption and total cost of ownership in large-scale AI data centers.

V10 is Samsung's newest 3D NAND flash memory, specially developed to meet the growing demand for high-performance, high-capacity, and energy-efficient storage in the age of artificial intelligence. Samsung Electronics' three-layer stacked HARC merger technology enables a V-NAND architecture with more than 400 lines. By combining it with multi-hole and zero-virtual hole technology, while improving manufacturing efficiency and overall product quality, the V10 achieved a 58% increase in bit density compared to the previous generation. The V10 architecture has high bit density and can support ultra-large SSDs of up to 128 TB, and its I/O performance of more than 4.8 Gbps supports the next generation of PCIe Gen7 SSDs. At the same time, higher energy efficiency helps reduce power consumption and total cost of ownership in large-scale AI data centers.