Samsung also unveiled the industry's first V10 BV-NAND architecture, which uses new wafer bonding technology and has over 400 layers. Compared to the previous generation, storage density has increased by nearly 60%, while reading and writing speed has also been increased. In addition to breakthroughs in hardware, Samsung also showcased a product roadmap that includes next-generation memory processing chips and high-capacity enterprise-class storage solutions.

Samsung also unveiled the industry's first V10 BV-NAND architecture, which uses new wafer bonding technology and has over 400 layers. Compared to the previous generation, storage density has increased by nearly 60%, while reading and writing speed has also been increased. In addition to breakthroughs in hardware, Samsung also showcased a product roadmap that includes next-generation memory processing chips and high-capacity enterprise-class storage solutions.