Samsung Electronics showcased its most advanced memory hardware and claimed improvements in performance and energy efficiency to surpass rivals SK Hynix and Micron Technology in the competition for long-term dominance. Samsung said in a statement that the new system stacks high-bandwidth memory vertically on top of an artificial intelligence accelerator, and the performance is about eight times that of the next generation HBM5. The system uses advanced wafer bonding technology, and the memory density will also reach more than ten times that of HBM5, while also supporting customized designs. Samsung plans to increase HBM4 production in the second half of this year. A specific timeline for HBM5 or this future technology has not yet been announced.

Samsung Electronics showcased its most advanced memory hardware and claimed improvements in performance and energy efficiency to surpass rivals SK Hynix and Micron Technology in the competition for long-term dominance. Samsung said in a statement that the new system stacks high-bandwidth memory vertically on top of an artificial intelligence accelerator, and the performance is about eight times that of the next generation HBM5. The system uses advanced wafer bonding technology, and the memory density will also reach more than ten times that of HBM5, while also supporting customized designs. Samsung plans to increase HBM4 production in the second half of this year. A specific timeline for HBM5 or this future technology has not yet been announced.