On July 27, Samsung Electronics announced an interview with Koo Zi-hyeon, the head of the technology development department of the company's semiconductor division. Ku Zi-hyeon said that the next generation of HBM5 memory is expected to run more than 50% faster than the HBM4E. “The HBM5 basic chip will use a 2 nm process with a GAA structure and achieve a higher degree of integration through silicon holes.”

On July 27, Samsung Electronics announced an interview with Koo Zi-hyeon, the head of the technology development department of the company's semiconductor division. Ku Zi-hyeon said that the next generation of HBM5 memory is expected to run more than 50% faster than the HBM4E. “The HBM5 basic chip will use a 2 nm process with a GAA structure and achieve a higher degree of integration through silicon holes.”