Zhitong Finance App learned that at the “IMW 2025” event held recently, Samsung Electronics explained in detail the evolution and future challenges of next-generation DRAM and NAND flash memory. Looking back at how storage technology has evolved over the years, whether it is DRAM or NAND flash, it is facing many challenges that hinder its further development. In the keynote address, Samsung expressed strong expectations for finding solutions and advancing technology continuously. The conference attracted the participation of many companies and experts from around the world, who shared rich and in-depth discussions about the future of DRAM and NAND. For example, imec unveiled pure metal gate technology for the first time, helping 3D NAND flash memory reduce the layer spacing to 30nm while ensuring reliability; Kioxia demonstrated its multi-level coding technology, bringing new possibilities for high-speed random access to flash memory; Applied Materials also developed Si channel technology for rapid epitaxial growth of 3D NAND.

Zhitong Finance App learned that at the “IMW 2025” event held recently, Samsung Electronics explained in detail the evolution and future challenges of next-generation DRAM and NAND flash memory. Looking back at how storage technology has evolved over the years, whether it is DRAM or NAND flash, it is facing many challenges that hinder its further development. In the keynote address, Samsung expressed strong expectations for finding solutions and advancing technology continuously. The conference attracted the participation of many companies and experts from around the world, who shared rich and in-depth discussions about the future of DRAM and NAND. For example, imec unveiled pure metal gate technology for the first time, helping 3D NAND flash memory reduce the layer spacing to 30nm while ensuring reliability; Kioxia demonstrated its multi-level coding technology, bringing new possibilities for high-speed random access to flash memory; Applied Materials also developed Si channel technology for rapid epitaxial growth of 3D NAND.