MARKET

MRAM

MRAM

Everspin Technol
NASDAQ
6.25
-0.10
-1.57%
After Hours: 6.34 +0.09 +1.44% 19:37 07/26 EDT
OPEN
6.42
PREV CLOSE
6.35
HIGH
6.42
LOW
6.19
VOLUME
110.76K
TURNOVER
0
52 WEEK HIGH
10.50
52 WEEK LOW
5.54
MARKET CAP
134.51M
P/E (TTM)
16.62
1D
5D
1M
3M
1Y
5Y
1D
Everspin Technologies: Shorts Have Come Looking
Seeking Alpha · 17h ago
EVERSPIN ANNOUNCES CONTRACT TO PROVIDE MRAM TECHNOLOGY FOR STRATEGIC RADIATION HARDENED FPGA
Reuters · 2d ago
Weekly Report: what happened at MRAM last week (0715-0719)?
Weekly Report · 4d ago
Friday Sector Laggards: Computer Peripherals, Semiconductors
NASDAQ · 07/19 16:03
Everspin Technologies Announces CFO Transition and Interim Successor
TipRanks · 07/18 20:31
Everspin Technologies Names Tenorio Interim CFO as Aggarwal Departs
Dow Jones · 07/18 20:23
Everspin Technology names Matthew Tenorio as interim CFO
Seeking Alpha · 07/18 20:14
Everspin Technologies Announces Departure Of CFO: Appoints Matthew Tenorio As Interim Chief Financial Officer, Effective July 18, 2024; Reiterates Q2 24 Guidance
Everspin Technologies, Inc. Appoints Matthew Tenorio as Interim Chief Financial Officer. Tenorio succeeds Anuj Aggarwal, who is leaving Everspin in July 2024. The company is the world's leading developer and manufacturer of MRAM persistent memory solutions.
Benzinga · 07/18 20:07
More
About MRAM
Everspin Technologies, Inc. is engaged in providing magneto resistive random-access memory (MRAM) solutions. The Company's MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM products include industry standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI (QSPI) interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.

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